⚡ The IRF640N is a high-performance N-Channel MOSFET designed for medium voltage, high current applications such as power converters, fast load switching, and energy systems in both industrial and electronic projects. With its 200V drain-source voltage and 18A current capacity, it offers fast switching, low on-resistance, and excellent efficiency in power electronics.
- ✅ Specifications:
- Transistor Type: MOSFET – N-Channel
- Max Drain-Source Voltage (Vds): 200V
- Max Continuous Drain Current (Id): 18A
- On-State Resistance (Rds(on)): 0.18Ω
- Gate Threshold Voltage (Vgs(th)): 2 – 4V
- Switching Speed: High
- Package Type: TO-220
- Power Dissipation: Up to 125W
- Operating Temperature: Up to +175°C
🔹 Key Features:
✔️ Handles high voltage and current
✔️ Low Rds(on) for efficient operation
✔️ Ideal for fast switching power applications
✔️ Microcontroller compatible (with proper gate drive)
✔️ Suitable for PWM and motor control systems
📌 Common Applications:
- Power conversion circuits (Boost/Buck/Inverter)
- Motor driver systems
- PWM controllers
- High-power LED lighting circuits
- Industrial and solar energy systems
🔸 Product Weight:
Product Weight: 2g
